會(huì)員1.png)
立即聯(lián)系何經(jīng)理：3BHB020720R0002 ABB 功率半導(dǎo)體器件 用于中電壓電路時(shí)
在90年代中期，ABB科研人員通過優(yōu)化門級極驅(qū)動(dòng)單元和器件外殼設(shè)計(jì)，采用集成門極等技術(shù)，大大降低了GTO驅(qū)動(dòng)電路的要求，實(shí)現(xiàn)了GTO到HD-GT0的技術(shù)飛躍。但HD-GTO的通態(tài)損耗比較大，研究人員就借鑒了IGBT在向中，高電壓發(fā)展過程中所積累的各種降損耗技術(shù)．對HD-GTO進(jìn)行了結(jié)構(gòu)優(yōu)化，并將它與其集成的硬驅(qū)動(dòng)門控單元一起命名為IGCT，集成門極換流晶閘管。
綜上所述，IGCT同時(shí)具有GTO的導(dǎo)通特性和IGBT的開關(guān)特性，特點(diǎn)是大電流、高電壓、開關(guān)頻率高、高可靠性、結(jié)構(gòu)緊湊和低損耗，性能明顯優(yōu)于目前廣泛使用的GTO和IGBT器件。
IGCT主要由主開關(guān)器件GTC及其相應(yīng)的集成門極驅(qū)動(dòng)單元所組成。GTC是由GTO演變而來，引入了緩沖層、陽極透明發(fā)射極和逆導(dǎo)結(jié)構(gòu)。其核心器件GTC如圖1所示的剖面結(jié)構(gòu)。
3BHB020720R0002
In the current field of medium voltage and high power application, the dominant power semiconductor devices mainly include thyristor, gate switchable thyristor (GTO), insulated gate bipolar transistor (IGBT), etc. These traditional power devices have some defects in practical aspects. Gtos are assembled into thousands of separate switch units on a single silicon chip. At medium voltage, GTO presents small on-state loss and reasonable off loss. However, due to the uneven switching, the GTO requires an external buffer circuit to maintain operation. These buffer circuits occupy most of the volume of the whole equipment, which is the main cause of complicated design, high cost and large loss.
On the contrary, the IGBT switch uniform, do not need buffer circuit, but the on-state loss is large, and used in the medium voltage circuit, must be used in series low-voltage IGBT, which greatly increases the complexity of the system and loss, but also reduces the reliability of the system.
In the mid-1990s, ABB researchers made the technological leap from GTO HD-GT0 by optimizing the GTO drive unit and device shell design, and adopting integrated gate and other technologies to greatly reduce the requirements of GTO drive circuits. However, the on-state loss of HD-GTO is relatively large, so the researchers draw on various loss reduction technologies accumulated in the development of IGBT to medium and high voltage. The structure of HD-GTO is optimized, and it is named IGCT, integrated gate commutator thyristor, together with its integrated hard drive gated unit.
In summary, IGCT has both the on-off characteristics of GTO and the switching characteristics of IGBT. It is characterized by high current, high voltage, high switching frequency, high reliability, compact structure and low loss, and its performance is obviously better than that of GTO and IGBT devices widely used at present.
IGCT is mainly composed of the main switching device GTC and its corresponding integrated gate drive unit. GTC is evolved from GTO, introducing buffer layer, anode transparent emitter and inverse conduction structure. The profile structure of its core device GTC is shown in Figure 1.
The traditional concept of a non-penetrating type is to form an anode by direct diffusion over a thick N-base region. When non-through-PN junction is blocked, the electric field distribution is triangular, as shown in Fig.1. It can be seen from Figure 2 that the total blocking voltage of the device is the integral of the electric field along the thickness of the silicon wafer. Therefore, the higher the blocking voltage is required, the thicker the silicon wafer will be, while the maximum strength of the electric field applied to the material remains unchanged. In this way, the on-off loss and switching loss of the device will increase correspondingly.
如果您需要任何東西，我們能夠解決您的缺陷零件或更換，
歡迎垂詢
控制系統(tǒng)（DCS、PLC/SPS、CNC）
– 面板控制器
– 人機(jī)界面和顯示面板
– 工業(yè)電腦
– 驅(qū)動(dòng)器（變頻器和伺服）
-電機(jī)
– 電源
雄霸自動(dòng)化秉承精益求精的企業(yè)理念，無論是工業(yè)自動(dòng)化零部件，
服務(wù)還是交付效率，我們都致力于做得更好。
為什么選擇雄霸？3BHB020720R0002 ABB 功率半導(dǎo)體器件 用于中電壓電路時(shí)
雄霸自動(dòng)化有限公司擁有大量的工業(yè)電子元件選擇，包括新的和停產(chǎn)的。
這些范圍從三十年到。
投資新技術(shù)并不總是必要的。
我們很樂意幫助您保持舊設(shè)備處于良好狀態(tài)。
我們目前庫存超過 20，000，000 件商品，建議零售價(jià)超過 2 億美元。
雄霸自動(dòng)化有限公司在獲得優(yōu)質(zhì)產(chǎn)品的同時(shí)節(jié)省了大量成本。
再次感謝您訪問雄霸自動(dòng)化有限公司。
有關(guān)訂單問題和技術(shù)支持，請通過網(wǎng)站或電子郵件與我們聯(lián)系。
對這些產(chǎn)品可能感興趣：3BHB020720R0002 ABB 功率半導(dǎo)體器件 用于中電壓電路時(shí)
| AMAT 0090-76110 VME PCB | ABB XVC768117 3BHB007211R117 | GE DS200TCPDG2BEC |
| YOKOGAWA YNT522D | ABB XVC768106 3BHB007211R106 | GE IS200TPROH1BBB |
| YOKOGAWA AIP171 | ABB CI857K01 3BSE018144R1 | GE DS200TCPDG1BEC |
| YOKOGAWA AIP591 | B&R 5AP1130.156C-000 | GE IC695CPU315-CD |
| KOLLMORGEN S72402-NANANA | ABB CI570 3BSE001440R1 | GE IC695ETM001-EK |
| ABB SK827005 SK827100-AS 480V 60Hz線圈 | EMERSON 1C31203G01 | ABB UFC911B106 3BHE037864R0106 |
| ABB LXN1604-6 | ENTERASYS A4H124-24TX P0973JM | ABB PCD235B1101 3BHE032025R1101 |
| ABB REF615C_C HCFFAEAGANB2BAN1XC | SCHUMACHER ATCS-15 1464-0320 | GE IC695CPU315 |
| ABB 5SHX1445H0001 3BHL000391P0101 3BHB003230R0101 5SXE05-0152 | FOXBORO FBM230 P0926GU | GE IC695ETM001 |
| MOOG D136-002-005帶D138-002-002 | GE F650-N-F-L-F-2-G-1-HI-P-6E | NI USB-6525 |
| HIMA K9203 996920302 | Lenze MCM09E30-RS0B0, | GE VMIVME-2532A |
| TRICONEX 3664 | A-B 2094-BM02-S/C | HIMA 4135A |
| Agilent HP 5517B | ABB DSDI452 | SIEMENS 3RK3131-2AC10 |
| RELIANCE 805405-1R 15A | AB 1756-PH75 | PFEIFFER CMR361 |
| YOKOGAWA AIP571 | ULTRA SLIMPAK G448-0002 | BENTLY 3500/22M 138607-01 |
免責(zé)聲明：
雄霸銷售工業(yè)自動(dòng)化零件，包括新產(chǎn)品和停產(chǎn)產(chǎn)品，以及購買此類特色產(chǎn)品通過獨(dú)立渠道進(jìn)行。
雄霸不是經(jīng)銷商，本網(wǎng)站上特色產(chǎn)品的經(jīng)銷商或代表。
所有產(chǎn)品名稱/產(chǎn)品圖片，本網(wǎng)站上使用的商標(biāo)、品牌和徽標(biāo)是其各自所有者的財(cái)產(chǎn)。
帶有這些名稱、圖像、商標(biāo)、品牌和徽標(biāo)的產(chǎn)品描述、描述或銷售僅用于識(shí)別目的，并不意味著與任何權(quán)利持有人有任何從屬關(guān)系或。
